Samsung SGH-F700V service manual, samsung service manuals schematy serwisowki
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GSM TELEPHONE
SGH-F700V
GSM TELEPHONE
CONTENTS
1. Safety Precautions
2. Specification
3. Product Function
4. Array course control
5. Exploded View and Parts List
6. Main Electrical Parts List
7. Block Diagrams
8. PCB Diagrams
9. Flow Chart of Troubleshooting
10. Reference data
11. Disassembly and Assembly
Instructions
GSPN (Global Service Partner Network)
Country
Web Site
North America
service.samsungportal.com
Latin America
latin.samsungportal.com
CIS
cis.samsungportal.com
Europe
europe.samsungportal.com
China
china.samsungportal.com
Asia
asia.samsungportal.com
Mideast & Africa
mea.samsungportal.com
This Service Manual is a property of Samsung Electronics Co.,Ltd.
Any unauthorized use of Manual can be punished under applicable
International and/or domestic law.
ⓒ
Samsung Electronics Co.,Ltd.
2007. 10. Rev.1.0
1. Safety Precautions
1-1. Repair Precaution
●
Repair in Shield Box, during detailed tuning.
Take specially care of tuning or test,
because specipicty of cellular phone is sensitive for surrounding interference(RF noise).
●
Be careful to use a kind of magnetic object or tool,
because performance of parts is damaged by the influence of magnetic force.
●
Surely use a standard screwdriver when you disassemble this product,
otherwise screw will be worn away.
●
Use a thicken twisted wire when you measure level.
A thicken twisted wire has low resistance, therefore error of measurement is few.
●
Repair after separate Test Pack and Set because for short danger (for example an
overcurrent and furious flames of parts etc) when you repair board in condition of
connecting Test Pack and tuning on.
●
Take specially care of soldering, because Land of PCB is small and weak in heat.
●
Surely tune on/off while using AC power plug, because a repair of battery charger is
dangerous when tuning ON/OFF PBA and Connector after disassembling charger.
●
Don't use as you pleases after change other material than replacement registered on SEC System.
Otherwise engineer in charge isn't charged with problem that you don't keep this rules.
1-1
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
S
afety Precautions
1-2. ESD(Electrostatically Sensitive Devices) Precaution
Several semiconductor may be damaged easily by static electricity. Such parts are called by ESD
(Electrostatically Sensitive Devices), for example IC,BGA chip etc. Read Precaution below.
You can prevent from ESD damage by static electricity.
●
Remove static electricity remained your body before you touch semiconductor or parts with
semiconductor. There are ways that you touch an earthed place or wear static electricity
prevention string on wrist.
●
Use earthed soldering steel when you connect or disconnect ESD.
●
Use soldering removing tool to break static electricity. , otherwise ESD will be damaged by
static electricity.
●
Don't unpack until you set up ESD on product. Because most of ESD are packed by box and
aluminum
plate to have conductive power,they are prevented from static electricity.
●
You must maintain electric contact between ESD and place due to be set up until ESD is connected
completely to the proper place or a circuit board.
1-2
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
2. Specification
2-1. GSM General Specification
EGSM 900 DCS 1800 PCS 1900 WCDMA2100
Freq.
Band[MHz]
Uplink/Downlink
880~915
925~960
1710~1785
1805~1880
1850~1910
1930~1990
1920~1980
2110~2170
ARFCN range
0~124 &
975~1023
512~885
512~810
UL:9612~9888
DL:10562~10838
Tx/Rx spacing
45MHz
95MHz
80MHz
190MHz
Mod. Bit rate/
Bit Period
270.833kbps
3.692us
270.833kbps
3.692us
270.833kbps
3.692us
3.84Mcps
Time Slot
Period/Frame
Period
576.9us
4.615ms
576.9us
4.615ms
576.9us
4.615ms
Frame length : 10ms
Slot length: 0.667ms
Modulation
0.3GMSK
0.3GMSK
0.3GMSK
QPSK
HQPSK
MS Power 33dBm~5dBm 30dBm~0dBm 30dBm~0dBm 24dBm~ -50dBm
Power Class
4
(max +33dBm)
1
(max +30dBm)
1
(max +30dBm)
3
(max +24dBm)
Sensitivity
-102dBm -100dBm -100dBm
-106.7dBm
TDMA Mux
8
8
8
NA
Cell Radius
35Km
2Km
2Km
2Km
2-1
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